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november 2009 doc id 8431 rev 7 1/14 14 std12nf06 std12nf06t4 n-channel 60 v, 0.08 ? , 12 a, dpak, ipak stripfet? ii power mosfet features exceptional dv /dt capability low gate charge applications switching application description this power mosfet is th e latest development of stmicroelectronics unique "single feature size" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. figure 1. internal schematic diagram type v dsss r ds(on) i d std12nf06 60v <0.1 ? 12a std12nf06t4 60v <0.1 ? 12a 1 3 dpak 3 2 1 ipak table 1. device summary order codes marking package packaging std12nf06t4t4 d12nf06 dpak tape and reel STD12NF06T4-1 d12nf06 ipak tube www.st.com
contents std12nf06, std12nf06t4 2/14 doc id 8431 rev 7 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
std12nf06, std12nf06t4 electrical ratings doc id 8431 rev 7 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v dgr drain-gate voltage (r gs = 20k ? )60v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25c 12 a i d drain current (continuous) at t c =100c 8.5 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 48 a p tot total dissipation at t c = 25c 30 w derating factor 0.2 w/c dv/dt (2) 2. i sd 12 a, di/dt 200 a/s, v ds v (br)dss , t j t jmax peak diode recovery voltage slope 15 v/ns e as (3) 3. starting t j = 25 o c, i d = 6 a, v dd = 30 v single pulse avalanche energy 140 mj t stg storage temperature -55 to 175 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case max 5 c/w r thja thermal resistance junction-ambient max 100 c/w t l maximum lead temperature for soldering purpose 275 c
electrical characteristics std12nf06, std12nf06t4 4/14 doc id 8431 rev 7 2 electrical characteristics (t case =25c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 25ma, v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10v, i d = 6a 0.08 0.1 w table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300 s, duty cycle 1.5% forward transconductance v ds = 15v , i d = 6a - 5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 - 315 70 30 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 48v, i d = 12a v gs = 10v - 10 3.0 3.5 12 nc nc nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 30v, i d = 6a, r g = 4.7 ?, v gs = 10v figure 14 on page 8 - 7 18 17 6 - ns ns ns ns
std12nf06, std12nf06t4 electrical characteristics doc id 8431 rev 7 5/14 table 7. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current - 12 a i sdm source-drain current (pulsed) - 48 a v sd (1) 1. pulsed: pulse duration= 300 s, duty cycle 1.5% forward on voltage i sd = 12a, v gs = 0 - 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 12a, di/dt = 100a/s, v dd = 30v, t j = 150c figure 16 on page 8 - 50 65 3.5 ns nc a
electrical characteristics std12nf06, std12nf06t4 6/14 doc id 8431 rev 7 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. transconductance figure 7. static drain-source on resistance
std12nf06, std12nf06t4 electrical characteristics doc id 8431 rev 7 7/14 figure 8. gate charge vs. gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs. temperature figure 11. normalized on resistance vs. temperature figure 12. source-drain diode forward characteristics figure 13. normalized breakdown voltage vs. temperature
test circuits std12nf06, std12nf06t4 8/14 doc id 8431 rev 7 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform
std12nf06, std12nf06t4 package mechanical data doc id 8431 rev 7 9/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data std12nf06, std12nf06t4 10/14 doc id 8431 rev 7 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 b 0.64 0. 9 0 b 2 0. 9 5 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 e 6.40 6.60 e2.2 8 e1 4.40 4.60 h 16.10 l 9 .00 9 .40 (l1) 0. 8 01.20 l2 0. 8 0 v1 10 o to-251 (ipak) mechanical data 006 8 771_h
std12nf06, std12nf06t4 package mechanical data doc id 8431 rev 7 11/14 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 a2 0.0 3 0.2 3 b 0.64 0. 9 0 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.2 8 e1 4.40 4.60 h 9 . 3 5 10.10 l1 l1 2. 8 0 l2 0. 8 0 l4 0.60 1 r0.20 v2 0 o 8 o to-252 (dpak) mechanical data 006 8 772_g
packaging mechanical data std12nf06, std12nf06t4 12/14 doc id 8431 rev 7 5 packaging mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
std12nf06, std12nf06t4 revision history doc id 8431 rev 7 13/14 6 revision history table 8. document revision history date revision changes 09-sep-2004 3 complete document 07-aug-2006 4 the document has been reformatted 19-feb-2007 5 typo mistake on page 1 15-apr-2009 6 table 1: device summary has been updated mechanical data updated 26-nov-2009 7 updated q rr in table 7: source drain diode .
std12nf06, std12nf06t4 14/14 doc id 8431 rev 7 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2009 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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